Comparison of different oxidation techniques for the preparation of high-quality tunnel oxide layers on crystalline silicon wafers

Konferenzbeitrag › Konferenzpaper › 2015

Zitation

Stegemann, Bert; Balamou, Patrice; Gad, Karim M.; Vössing, Daniel; Kasemann, Martin; Angermann, Heike: Comparison of different oxidation techniques for the preparation of high-quality tunnel oxide layers on crystalline silicon wafers. In: Progress in Applied Surface, Interface and Thin Film Science 2015. Hg. von Brunner, Róbert. Bratislava: Comenius University 2015, S. 134-135.

ISBN

978-80-223-3075-9

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