Passivation of ultrathin SiOx/c-Si interfaces: Analysis of electronic and chemical properties by x-ray photoelectron spectroscopy and surface photovoltage measurements
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› 2015
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Stegemann, Bert; Balamou, Patrice; Gad, Karim M.; Vössing, Daniel; Kasemann, Martin; Angermann, Heike: Passivation of ultrathin SiOx/c-Si interfaces: Analysis of electronic and chemical properties by x-ray photoelectron spectroscopy and surface photovoltage measurements. In: 18. Tagung Festkörperanalytik. Wien: Technische Universität Wien 2015, S. KV30.