Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

Artikel › Journalartikel › 2017

Zitation

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike: Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities. In: Applied Surface Science Vol. 395, 15.02.2017. (2017), S. 78-85.

ISSN

0169-4332

Link

http://dx.doi.org/10.1016/j.apsusc.2016.06.090

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