Hydrogen passivation of interfacial gap state defects at UHV prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100)

Typ

Beitrag Zeitschrift von Prof. Dr. Bert Stegemann

Zitation

Stegemann, Bert; Schoepke, Andreas; Sixtensson, Daniel; Gorka, Benjamin; Lussky, Thomas; Schmidt, Manfred: Hydrogen passivation of interfacial gap state defects at UHV prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100). In: Physica E: Low-dimensional Systems and Nanostructures, S. 1019-1024 , Elsevier B.V., 2009, ISSN 1386-9477

Homepage

http://dx.doi.org/10.1016/j.physe.2008.08.012