A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source

Typ

Beitrag Zeitschrift von Prof. Dr. Bert Stegemann

Zitation

Sarikov, Andrey ; Stegemann, Bert ; Schmidt, Manfred : A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source. In: Thin Solid Films, S. 4662–4666, Elsevier B.V., 2010, ISSN 0040-6090

Homepage

http://dx.doi.org/10.1016/j.tsf.2009.12.054