Improved Si/SiO x interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Typ

Beitrag Zeitschrift von Prof. Dr. Bert Stegemann

Zitation

Gad, Karim M. ; Vössing, Daniel ; Balamou, Patrice ; Hiller, Daniel ; Stegemann, Bert ; Angermann, Heike ; Kasemann, Martin: Improved Si/SiO x interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation. In: Applied Surface Science, S. 1269-1276, 2015, ISSN 0169-4332

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http://www.sciencedirect.com/science/article/pii/S016943321501627X