Reduction of the interface defect density on crystalline silicon solar cell substrates by wet-chemical preparation of ultrathin SiOx passivation layers

Typ

Beitrag Konferenzband von Prof. Dr. Bert Stegemann

Zitation

Balamou, Patrice ; Angermann, Heike ; Stegemann, Bert : Reduction of the interface defect density on crystalline silicon solar cell substrates by wet-chemical preparation of ultrathin SiOx passivation layers. In: Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, S. 1-6, IEEE, New Orleans, LA, USA , 2015, ISBN 978-0-8137-2513-0

Homepage

http://dx.doi.org/10.1109/PVSC.2015.7356400