Passivation of ultrathin SiOx/c-Si interfaces: Analysis of electronic and chemical properties by x-ray photoelectron spectroscopy and surface photovoltage measurements

Typ

Beitrag Konferenzband von Prof. Dr. Bert Stegemann

Zitation

Stegemann, Bert ; Balamou, Patrice ; Gad, Karim M. ; Vössing, Daniel ; Kasemann, Martin ; Angermann, Heike: Passivation of ultrathin SiOx/c-Si interfaces: Analysis of electronic and chemical properties by x-ray photoelectron spectroscopy and surface photovoltage measurements. In: 18. Tagung Festkörperanalytik, S. KV30, Technische Universität Wien, Wien, 2015, ISBN -