Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

Typ

Beitrag Zeitschrift von Prof. Dr. Bert Stegemann

Zitation

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike: Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities. In: Applied Surface Science , S. 78-85, 2017, ISSN 0169-4332

Homepage

http://dx.doi.org/10.1016/j.apsusc.2016.06.090