Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si

Typ

Beitrag Konferenzband von Prof. Dr. Bert Stegemann

Zitation

Stegemann, Bert ; Lussky, Thomas ; Gorka, Benjamin ; Schoepke, Andreas ; Schmidt, Manfred : Hydrogen passivation of electronic gap states at the interfaces of ultrathin SiO2 layers on crystalline Si. In: Proceedings, 21th Workshop on Quantum Solar Energy Conversion (QUANTSOL), S. 2 Seiten, Rauris, 2009

Homepage

http://www.quantsol.org/pub/pub09_29.pdf