Low-Temperature Preparation of SiO2 Tunnel Oxides on c-Si with Chemically Abrupt Interfaces and Low Densities of Defect States

Typ

Beitrag Konferenzband von Prof. Dr. Bert Stegemann

Zitation

Stegemann, B. ; Korte, L. ; Gref, O. ; Lussky, T. ; Schmidt, M. ; Angermann, H. : Low-Temperature Preparation of SiO2 Tunnel Oxides on c-Si with Chemically Abrupt Interfaces and Low Densities of Defect States, S. 1615 - 1619, W.I.P., München, 2011, ISBN 3-936338-27-2

Homepage

http://dx.doi.org/10.4229/26thEUPVSEC2011-2BV.3.8