Comparison of different oxidation techniques for the preparation of high-quality tunnel oxide layers on crystalline silicon wafers

Typ

Beitrag Konferenzband von Prof. Dr. Bert Stegemann

Zitation

Stegemann, Bert ; Balamou, Patrice ; Gad, Karim M. ; Vössing, Daniel ; Kasemann, Martin ; Angermann, Heike : Comparison of different oxidation techniques for the preparation of high-quality tunnel oxide layers on crystalline silicon wafers. In: Progress in Applied Surface, Interface and Thin Film Science 2015, S. 134-135, Comenius University, Bratislava, 2015, ISBN 978-80-223-3075-9