Hydrogen passivation of interfacial gap state defects at UHV prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100)

Artikel › Journalartikel › 2009

Zitation

Stegemann, Bert; Schoepke, Andreas; Sixtensson, Daniel; Gorka, Benjamin; Lussky, Thomas; Schmidt, Manfred: Hydrogen passivation of interfacial gap state defects at UHV prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100). In: Physica E: Low-dimensional Systems and Nanostructures 41, 6. (2009), S. 1019-1024 .

ISSN

1386-9477

Link

http://dx.doi.org/10.1016/j.physe.2008.08.012

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