A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source

Artikel › Journalartikel › 2010

Zitation

Sarikov, Andrey; Stegemann, Bert; Schmidt, Manfred: A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source. In: Thin Solid Films 518, 16. (2010), S. 4662–4666.

ISSN

0040-6090

Link

http://dx.doi.org/10.1016/j.tsf.2009.12.054

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