Electron Spin Relaxation and Coherence Times of Silicon Vacancies in 4H Silicon Carbide
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› 2026
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Artikel
Dona, Irene; Segant, Michele; Marcozzi, Gianluca; Nguyen, Tien Son; Oshima, Takeshi; Ngo, Ha Duong; Naydenov, Boris: Electron Spin Relaxation and Coherence Times of Silicon Vacancies in 4H Silicon Carbide. In: Physical Review B 2026. (2026), S. 1-8.