Low-Temperature Preparation of SiO2 Tunnel Oxides on c-Si with Chemically Abrupt Interfaces and Low Densities of Defect States

Konferenzbeitrag › Konferenzpaper › 2011

Zitation

Stegemann, B.; Korte, L.; Gref, O.; Lussky, T.; Schmidt, M.; Angermann, H.: Low-Temperature Preparation of SiO2 Tunnel Oxides on c-Si with Chemically Abrupt Interfaces and Low Densities of Defect States. . München: W.I.P. 2011, S. 1615 - 1619.

ISBN

3-936338-27-2

Link

http://dx.doi.org/10.4229/26thEUPVSEC2011-2BV.3.8

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