Ultrathin SiO2 layers on Si(111): Preparation, interface gap states, and influence of passivation

Typ

Beitrag Zeitschrift von Prof. Dr. Bert Stegemann

Zitation

Stegemann, Bert; Sixtensson, Daniel; Lußky, Thomas; Schoepke, Andreas; Didschuns, Iris; Rech, Bernd; Schmidt, Manfred: Ultrathin SiO2 layers on Si(111): Preparation, interface gap states, and influence of passivation. In: Nanotechnology, S. 424020 (8pp) , 2008, ISSN 0957-4484

Homepage

http://dx.doi.org/10.1088/0957-4484/19/42/424020