Ultrathin SiO2 layers on Si(111): Preparation, interface gap states, and influence of passivation

Artikel › Journalartikel › 2008

Zitation

Stegemann, Bert; Sixtensson, Daniel; Lußky, Thomas; Schoepke, Andreas; Didschuns, Iris; Rech, Bernd; Schmidt, Manfred: Ultrathin SiO2 layers on Si(111): Preparation, interface gap states, and influence of passivation. In: Nanotechnology 19. (2008), S. 424020 (8pp) .

ISSN

0957-4484

Link

http://dx.doi.org/10.1088/0957-4484/19/42/424020

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