High mobility In2O3:H as contact layer for a-Si:H/c-Si heterojunction and μc-Si:H thin film solar cells

Artikel › Journalartikel › 2015

Zitation

Scherg-Kurmes, Harald; Körner, Stefan; Ring, Sven; Klaus, Manuela; Korte, Lars; Ruske, Florian; Schlatmann, Rutger; Rech, Bernd; Szyszka, Bernd: High mobility In2O3:H as contact layer for a-Si:H/c-Si heterojunction and μc-Si:H thin film solar cells. In: Thin Solid Films Volume 594, Part B. (2015), S. 316-322.

ISSN

0040-6090

Link

http://dx.doi.org/10.1016/j.tsf.2015.03.022

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